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Monocrystalline Silicon Ingot
Product Re-order No.: SS/MS/MI
Type/Dopant : P/Boron; N/phosphorus
Orientation : ＜100＞ 、＜111＞、 ＜110＞
Diameter : 1.5"-12"
Resistivity : 0.5-3-80Ω.cm Radial resistivity variation: No
Minority carrier Lifetime: ≥10μs Defect: None
Note: other specification depends on the customers' requirement |
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Monocrystalline Silicon Wafe
Product Re-order No.: SS/MS/MW
Type/Dopant : P/Boron; N/phosphorus
Orientation : ＜100＞、＜111＞、＜110＞
Diameter : 1.5" -12" Thickness: 200-240um
Resistivity : 0.5-3-80Ω.cm Minority carrier Lifetime: ≥10μs
Note: other specification depends on the customers' requirement |
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Monocrystalline Silicon Broken wafer (chips)
Product Re-order No.: SS/MS/MC
Type/Dopant : P/Boron;
N/phosphorus
Diameter : 1.5"-12"
Thickness: 200-240um
Resistivity : 0.5Ω.cm min
Note: other specification depends on
the customers' requirement |
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Polycrystalline Silicon Chunk
Product Re-order No.: SS/PS/PC
Type/Dopant: P/Boron; N/phosphorus
PURITY: 4N，5N RESISTIVITY: 0.5Ω.cm min
SIZE: 2-150 mm PACKING: 30KG PLASTICS BOX |
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Polycrystalline Silicon Ingot
Product Re-order No.: SS/PS/PI
Type/Dopant : P/Boron; N/phosphorus
PURITY: 6N，7N RESISTIVITY: 0.5Ω.cm min
SIZE: 2-150 mm |
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Polycrystalline Silicon Wafer
Product Re-order No.: SS/PS/PW
Type/Dopant : P/Boron; N/phosphorus
Diameter : 1.5"-12"
Thickness: 200-300um
Resistivity : 0.5-3Ω.cm
Minority carrier Lifetime: ≥5μs
Note: other specification depends on the customers' requirement |
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